Date published: 2026-4-24

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Tetrakis(diethylamino)zirconium (CAS 13801-49-5)

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CAS Number:
13801-49-5
Molecular Weight:
379.74
Molecular Formula:
C16H40N4Zr
Supplemental Information:
This is classified as a Dangerous Good for transport and may be subject to additional shipping charges.
For Research Use Only. Not Intended for Diagnostic or Therapeutic Use.
* Refer to Certificate of Analysis for lot specific data.

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Tetrakis(diethylamino)zirconium is a chemical primarily investigated for its applications in materials science, particularly within the area of atomic layer deposition (ALD) processes. This compound acts as a zirconium precursor, enabling the precise deposition of zirconium-containing thin films that are integral to semiconductor device manufacturing. Its reactivity under controlled conditions allows for the study of surface chemistry and thin-film growth kinetics, critical for improving electronic component performance. Chemists often employ this compound in the synthesis of zirconium-based ceramics and catalysts, exploring the influence of its ligands on the resultant material properties. Additionally, its utility in producing metal-organic frameworks (MOFs) is of significant interest due to the potential these structures have for gas storage and separation applications.


Tetrakis(diethylamino)zirconium (CAS 13801-49-5) References

  1. Titanium and zirconium complexes of a phosphorus-containing p-tert-butylcalix[5]arene ligand: importance of metal and conformation on ligand/metal binding.  |  Fan, M., et al. 2006. Inorg Chem. 45: 6490-6. PMID: 16878963
  2. Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water.  |  Xu, R., et al. 2022. Front Chem. 10: 1035902. PMID: 36405315
  3. Resolving the Heat Generated from ZrO2 Atomic Layer Deposition Surface Reactions.  |  Bielinski, AR., et al. 2023. Angew Chem Int Ed Engl. e202301843. PMID: 37316957
  4. Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium  |  S. Abermann, C. Henkel, O. Bethge, G. Pozzovivo, P. Klang, E. Bertagnolli. 2010. Applied Surface Science. 256: 5031-5034.

Ordering Information

Product NameCatalog #UNITPriceQtyFAVORITES

Tetrakis(diethylamino)zirconium, 5 g

sc-272578
5 g
$86.00