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Germanium disulfide (GeS2) is a two-dimensional material consisting of germanium (Ge) and sulfur (S) atoms arranged in a honeycomb lattice structure. This material exhibits semiconductor properties with a direct bandgap of 2.1 eV. By altering the number of layers, the bandgap of germanium disulfide can be adjusted, allowing precise control over its optical characteristics. Notably, the high electrical conductivity of this material arises from the localization of electrons in the conduction band on the sulfur (S) atoms. Additionally, doping germanium disulfide with various elements, such as boron and nitrogen, offers further means of tuning its bandgap.
Ordering Information
| Product Name | Catalog # | UNIT | Price | Qty | FAVORITES | |
Germanium Disulfide, 1 g | sc-358678 | 1 g | $219.00 | |||
Germanium Disulfide, 10 g | sc-358678A | 10 g | $770.00 | |||
Germanium Disulfide, 100 g | sc-358678B | 100 g | $9384.00 |